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| JMnic Product Specification Silicon PNP Power Transistors 2SA1106 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -200 -140 -6 -10 100 150 -55~150 ae ae UNIT V V V A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA1106 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -140 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.8 V ICBO Collector cut-off current VCB=-140V; IE=0 -100 |I A IEBO Emitter cut-off current VEB=-6V; IC=0 -100 |I A hFE DC current gain IC=-5A ; VCE=4V 50 180 fT Transition frequency IE=1A ; VCE=-12V 20 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1106 Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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